71. Grams. S. Lin and you will J. B. Kuo, “Fringing-Induced Narrow-Channel-Feeling (FINCE) Related Capacitance Conclusion off Nanometer FD SOI NMOS Equipment Having fun with Mesa-Separation Through three-dimensional Simulation” , EDSM , Taiwan ,
72. J. B. Kuo, “Development away from Bootstrap Approaches to Lower-Current CMOS Digital VLSI Circuits to possess SOC Software” , IWSOC , Banff, Canada ,
P. Yang, “Door Misalignment Effect Related Capacitance Choices off a 100nm DG FD SOI beautiful sexy Sarapul girls NMOS Unit having letter+/p+ Poly Greatest/Bottom Door” , ICSICT , Beijing, China
73. Grams. Y. Liu, Letter. C. Wang and J. B. Kuo, “Energy-Efficient CMOS Higher-Weight Rider Routine into Subservient Adiabatic/Bootstrap (CAB) Way of Reasonable-Fuel TFT-Lcd Program Programs” , ISCAS , Kobe, Japan ,
74. Y. S. Lin, C. H. Lin, J. B. Kuo and you may K. W. Su, “CGS Capacitance Occurrence from 100nm FD SOI CMOS Equipment which have HfO2 High-k Gate Dielectric Given Straight and you will Fringing Displacement Consequences” , HKEDSSC , Hong kong ,
75. J. B. KUo, C. H. Hsu and C. P. Yang, “Gate-Misalignment Relevant Capacitance Conclusion from an effective 100nm DG SOI MOS Devices with N+/p+ Top/Bottom Gate” , HKEDSSC , Hong kong ,
76. Grams. Y. Liu, N. C. Wang and you will J. B. Kuo, “Energy-Successful CMOS Highest-Weight Driver Routine for the Subservient Adiabatic/Bootstrap (CAB) Technique for Reasonable-Strength TFT-Liquid crystal display Program Applications” , ISCAS , Kobe, The japanese ,
77. H. P. Chen and J. B. Kuo, “A beneficial 0.8V CMOS TSPC Adiabatic DCVS Reason Routine to your Bootstrap Technique to own Reasonable-Fuel VLSI” , ICECS , Israel ,
B. Kuo, “A novel 0
80. J. B. Kuo and you can H. P. Chen, “The lowest-Current CMOS Weight Driver into the Adiabatic and you may Bootstrap Techniques for Low-Stamina System Software” , MWSCAS , Hiroshima, The japanese ,
83. M. T. Lin, E. C. Sunshine, and J. B. Kuo, “Asymmetric Gate Misalignment Influence on Subthreshold Features DG SOI NMOS Gadgets Given Fringing Electronic Field-effect” , Electron Devices and you will Topic Symposium ,
84. J. B. Kuo, E. C. Sun, and you will M. T. Lin, “Studies of Gate Misalignment Affect this new Tolerance Voltage from Double-Entrance (DG) Ultrathin FD SOI NMOS Gadgets Playing with a tight Design Provided Fringing Digital Field effect” , IEEE Electron Products for Microwave and Optoelectronic Apps ,
86. Age. Shen and J. 8V BP-DTMOS Articles Addressable Memory Cellphone Circuit Derived from SOI-DTMOS Procedure” , IEEE Meeting to your Electron Devices and you will Solid-state Circuits , Hong kong ,
87. P. C. Chen and you can J. B. Kuo, “ic Reasoning Routine Having fun with an immediate Bootstrap (DB) Way of Reasonable-current CMOS VLSI” , Worldwide Symposium towards the Circuits and you can Solutions ,
89. J. B. Kuo and S. C. Lin, “Lightweight Description Design to have PD SOI NMOS Gadgets Offered BJT/MOS Impact Ionization to own Spice Circuits Simulation” , IEDMS , Taipei ,
ninety. J. B. Kuo and S. C. Lin, “Compact LDD/FD SOI CMOS Device Model Provided Energy Transport and you may Notice Heating to possess Liven Circuit Simulation” , IEDMS , Taipei ,
91. S. C. Lin and J. B. Kuo, “Fringing-Created Hindrance Reducing (FIBL) Aftereffects of 100nm FD SOI NMOS Devices with a high Permittivity Entrance Dielectrics and you may LDD/Sidewall Oxide Spacer” , IEEE SOI Conference Proc , Williamsburg ,
92. J. B. Kuo and you may S. C. Lin, “The fresh Fringing Electronic Field-effect to the Small-Channel Perception Threshold Current of FD SOI NMOS Equipment with LDD/Sidewall Oxide Spacer Construction” , Hong kong Electron Equipment Conference ,
93. C. L. Yang and J. B. Kuo, “High-Heat Quasi-Saturation Make of High-Voltage DMOS Power Devices” , Hong-kong Electron Gizmos Conference ,
94. Elizabeth. Shen and you will J. B. Kuo, “0.8V CMOS Stuff-Addressable-Recollections (CAM) Telephone Ciurcuit having a simple Level-Evaluate Possibilities Playing with Majority PMOS Dynamic-Endurance (BP-DTMOS) Techniques According to Practical CMOS Tech getting Lowest-Current VLSI Possibilities” , Around the world Symposium towards Circuits and you may Expertise (ISCAS) Proceedings , Washington ,